CASPIAN JOURNAL

MANAGEMENT AND HIGH TECHNOLOGIES

The making technology of multi-layer epitaxial structure for thermoelectric generator on the basis of semiconductor compounds А3В5

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The making technology of multi-layer epitaxial structure for thermoelectric generator on the basis of semiconductor compounds А3В5  // Caspian journal : management and high technologies. — 2010. — №2. — pp. 90-97.

The structure of epitaxial layers for thermoelement on basis InSb and InAs is developed. Тhe epitaxial layer’s parameters are calculated: the layer’s thickness, the periods of crystalline grating, the concentration of admixtures. We suggest making technology of thermo element of working layers. It’s suggested to use the method of temperature of gradient zone recrystallization for layers epitaxy.

Key words: thermo element,making technology,working epitaxial layers,method of temperature gradient zone recrystallization.