CASPIAN JOURNAL
MANAGEMENT AND HIGH TECHNOLOGIES
Mathematical modelling of kinetics of self-organization of subnanodimensional carbon mask coverings on crystals of silicon (100)
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Read | Yafarov R. K., Shanygin V. Ya. Mathematical modelling of kinetics of self-organization of subnanodimensional carbon mask coverings on crystals of silicon (100) // Caspian journal : management and high technologies. — 2018. — №3. — pp. 109-117. |
Yafarov R. K. - Doct. Sci. (Engineering), Professor, Saratov Branch of the Kotelnikov Institute of Radioengineering and Electronic of Russian Academy of Sciences, 38 Zelenaya St., Saratov, 410019, Russian Federation, pirpc@yandex.ru
Shanygin V. Ya. - Cand. Sci. (Engineering), Researcher, Saratov Branch of the Kotelnikov Institute of Radioengineering and Electronic of Russian Academy of Sciences, 38 Zelenaya St., Saratov, 410019, Russian Federation, vitairerun@mail.ru
For the first time with use of methods scanning atomic-force and electronic microscopy the kinetics of self-organization of nanodimensional domains is recorded at sedimentation of submonolayer carbon coverings on silicon (100) in the microwave to plasma of vapors of ethanol of low pressure. Influence of kinetic energy the carbonaceous of ions on kinetics of structuring carbon clusters on a atomic and pure surface of crystals of silicon (100) is investigated. Within kinetic approach the mathematical model establishing connection between speeds of sedimentation of carbon coverings as functions of the external variables characterizing plasma process such as temperature of a substrate and density of a stream of adsorption of carbon-bearing ions is offered. It is shown that the received nanodimensional carboniferous domains can be used in quality the shadow-mask-type of coverings for receiving with use of high anisotropic plasmochemical etching of spatial low-dimensional systems on single-crystal silicon (100).
Key words: углеродное покрытие, микроволновая плазма, кремний, плазмохимическое травление, низкоразмерная система, катодная матрица, кинетика самоорганизации, математическая модель, carbon covering, microwave plasma, silicon, plasmochemical etching, low-dimensional