CASPIAN JOURNAL
MANAGEMENT AND HIGH TECHNOLOGIES
PLASMOCHEMICAL MODIFICATION OF THE SURFACE OF SILICON (100) AT MICROWAVE PLASMA PROCESSING
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Read | Yafarov R. K., Shanygin V. Ya. PLASMOCHEMICAL MODIFICATION OF THE SURFACE OF SILICON (100) AT MICROWAVE PLASMA PROCESSING // Caspian journal : management and high technologies. — 2018. — №3. — pp. 118-128. |
Yafarov R. K. - Doct. Sci. (Engineering), Professor, Saratov Branch of the Kotelnikov Institute of Radioengineering and Electronic of Russian Academy of Sciences, 38 Zelenaya St., Saratov, 410019, Russian Federation, pirpc@yandex.ru
Shanygin V. Ya. - Cand. Sci. (Engineering), Researcher, Saratov Branch of the Kotelnikov Institute of Radioengineering and Electronic of Russian Academy of Sciences, 38 Zelenaya St., Saratov, 410019, Russian Federation, vitairerun@mail.ru
The relevance of the researches considered in article for the solution of problems of nanoelectronics as sets of the devices and devices based on use of quantum-dimensional effects is proved. Schemes of carrying out pilot studies are submitted, means of data acquisition at such researches are described. Special attention is paid to use of means of characterization of nanoobjects and fixing of the received results in an objective form, uses of the COMPUTER for accumulation of primary data, their processing. Physical and chemical processes and mechanisms of influence of plasma preparation of a surface on regularities of condensation and superficial phase transformations when forming nanodimensional silicon - carbon domains on crystals of silicon (100) are studied at sedimentation of submonolayer carbon coverings in the microwave plasma of vapors of ethanol of low pressure. It is shown that the lateral sizes of domains are stabilized at the level of 200 nanometers, and heights of the ledges received by high anisotropic plasmochemical etching of silicon through domain mask coverings are in the range from 40 up to 80 nanometers. It allows realizing fully advantages of the quantum and one-electron effects, such as tunneling, dimensional quantization of a power range and Coulomb blockade inherent in electronic elements of nanometer scale.
Key words: плазменная микрообработка, наноструктурирование поверхности, фазовый состав, кремний-углеродные домены, получение и обработка экспериментальных результатов, атомно-силовая и электронная микроскопия, информационно-измерительные системы, plasma microprocess