CASPIAN JOURNAL
MANAGEMENT AND HIGH TECHNOLOGIES
THEORETICAL PRECONDITIONS AND FEATURES OF CONSTRUCTIVE DECISIONS OF INSTALLATION ON TESTING POWER DIODES WITH THE SHOCK CURRENT OF BIG SIZE
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Read | Ershov Andrey B., Khorolsky Vladimir Ya., Khabarov Alexey N. THEORETICAL PRECONDITIONS AND FEATURES OF CONSTRUCTIVE DECISIONS OF INSTALLATION ON TESTING POWER DIODES WITH THE SHOCK CURRENT OF BIG SIZE // Caspian journal : management and high technologies. — 2011. — №4. — pp. 33-40. |
Ershov Andrey B. - Cand. in Technics, Stavropol State Agrarian University, 355017, Russia, Stavropol, 12 Zootechnichesky str., erschow157500@yandex.ru.
Khorolsky Vladimir Ya. - D.Sc. in Technology, Stavropol State Agrarian University, 12 Zootekhnicheskaya str., Stavropol, 355017, Russia, erschow157500@yandex.ru.
Khabarov Alexey N. - Cand. in Technology, Stavropol Institute of Technology of Service (branch) of South Russian State University of Economy and Service, 41/1 Kulakov str., Stavropol, 355000, Russia, habrw@yandex.ru.
In the article a new principle of formation of single impulses of a shock current in size from 0,1 to 2 кА and its application in the developed skilled installation for test of power semi-conductor diodes UIUPT-2000 on parameter is considered: a shock non-repeated direct current. Technics bases formiro-vanija an impulse of a shock current of the big size which are based on use of a principle of discrete superposition of charges in an electric chain of a secondary winding of the power pulse transformer are stated. The advantages of the given technics allowing in comparison with installations are stated, using an accumulation principle ener-gii in capacitor stores of energy considerably to lower массогабаритные harak-teristiki the test equipment and to create conditions for maintenance effek-tivnogo a digital control process of formation of an impulse of a shock current "hurriedly" ("on-the-fly"). Results of tests power of semiconductor diodes on stability to influence of impulses of a direct shock current are presented. Distinction between settlement values and the data of experimental researches is caused by the fact that during calculation the energy size transferred from crystal of the semiconductor of the tested device to the elements of its heat-sink and shunt wasn’t considered. This distinction can be considered by introduction of size of a constant heat-irradiation.
Key words: tests of power semi-conductor devices,shock non-repeated impulse of a direct current,principle of discrete superposition of charges