CASPIAN JOURNAL
MANAGEMENT AND HIGH TECHNOLOGIES
PERFECTION OF MANUFACTURING TECHNIQUES НИЗКОВОЛЬНОГО OF THE TRANSISTOR WITH NANOSIZES OF ACTIVE AREAS
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Read | Shakhmaeva Aishat R., Zakharova Patimat R. PERFECTION OF MANUFACTURING TECHNIQUES НИЗКОВОЛЬНОГО OF THE TRANSISTOR WITH NANOSIZES OF ACTIVE AREAS // Caspian journal : management and high technologies. — 2011. — №4. — pp. 103-111. |
Shakhmaeva Aishat R. - Cand. in Technics, Dagestan State Technical University, 70 Shamilya str., Makhachkala, 367015, Republic of Dagestan, Russia, fpk12@mail.ru.
Zakharova Patimat R. - Post-graduate student, Dagestan State Technical University, 70 Shamilya str., Makhachkala, 367015, Republic of Dagestan, Russia, patimatzakharova@gmail.com.
In the article features of process of manufacturing of bipolar transistors with the isolated shutter (IGBT) are considered. A domestic analogue of transistor MGP20N40CL of firm Motorola has been made on the offered modernised technology. The program method receives its topology and design. The optimised structure is simulated with the help of device-technological complex of programs of “Synopsys” company. The offered technology is of special interest that allows to form nanosize layers in the structure of topology of the made device: processes of formation of areas of shutters occur on a substrate to a double layer epitaxy escalatings. Such approach to technology of creation and formation of channels has allowed to place on the smaller area of a crystal a lot of shutters. The result of the spent researches is microminiaturisation of the device till the sizes, 5 times smaller than the ones of “Motorola” company. Features of the received crystal of the transistor, namely its sizes, electric indicators and target characteristics are considered and revealed. Also of an important value is the commercial component of manufacture of devices according to the technology offered by us which has an increase in per cent of an exit of suitable crystals and larger quantity (in several times) of crystals on one plate. Advantages and disadvantages of the product have also been mentioned in the article.
Key words: izolated gate bipolar transistor,target characteristics,МОS-structure,crystal,mezaplanar technology,plazmochemistry clearing,ionic alloying